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IPA50R140CP coolmos tm power transistor features w 4 e h b : m ? : ; 8 ; i j / =l"a`# ? d 1 , w ) e m ; i j < ? = k h ; e < c ; h ? j / , + n . y w 2 b j h 7 b e m = 7 j ; 9 > 7 h = ; w " n j h ; c ; : l : j h 7 j ; : w % ? = > f ; 7 a 9 k h h ; d j 9 7 f 7 8 ? b ? j o w - 8
< h ; ; b ; 7 : f b 7 j ? d = / e % 0 9 e c f b ? 7 d j

w . k 7 b ! < ? ; :
7 9 9 e h : ? d = j e ' " ! " )# coolmos cp is designed for: w % 7 h : 7 d : i e < j i m ? j 9 > ? d = 0 * - 0 < e h i ; h l ; h f e m ; h i k f f b ? ; i w * - # < e h 1 5 + e j ; 8 e e a 7 : 7 f j ; h - ! - 7 d : ) ! 1 3 w - 4 * i j 7 = ; i < e h 0 ; h l ; h : 7 f j ; h maximum ratings, 7 j t \ z k d b ; i i e j > ; h m ? i ; i f ; 9 ? < ? ; : parameter symbol conditions unit e d j ? d k e k i : h 7 ? d 9 k h h ; d j *# i = t < z 9 t < z - k b i ; : : h 7 ? d 9 k h h ; d j +# i =%bg^ew t < z l 7 b 7 d 9 > ; ; d ; h = o i ? d = b ; f k b i ; e 9l i = v == 3 /*/ _c l 7 b 7 d 9 > ; ; d ; h = o h ; f ; j ? j ? l ; t 9k +#%,# e 9k i = v == 3 l 7 b 7 d 9 > ; 9 k h h ; d j h ; f ; j ? j ? l ; t 9k +#%,# i 9k 9 * , 0 # " 1 : v (v t h k = = ; : d ; i i : v (v t v =l 3 o(`e $ 7 j ; i e k h 9 ; l e b j 7 = ; v @l efsf[u o < % p - e m ; h : ? i i ? f 7 j ? e d p faf t < z p , f ; h 7 j ? d = 7 d : i j e h 7 = ; j ; c f ; h 7 j k h ; t \ t efy v< * e k d j ? d = j e h g k ; * i 9 h ; m i + 9 c w,) ,-
)'2, 2', .) w+) value +, *. ./ v ! 0 8m \_sj ..) o r =l"a`#%_sj )'*-) " q y%fkb -1 `< product summary type package marking bi9.)k*-) # - / ; l f 7 = ;

IPA50R140CP maximum ratings, 7 j t \ z k d b ; i i e j > ; h m ? i ; i f ; 9 ? < ? ; : parameter symbol conditions unit e d j ? d k e k i : ? e : ; < e h m 7 h : 9 k h h ; d j *# i l 9 ! ? e : ; f k b i ; 9 k h h ; d j +# i l%bg^ew ./ / ; l ; h i ; : ? e : ; : v (v t -# v v (v t *. o(`e parameter symbol conditions unit min. typ. max. thermal characteristics 1 > ; h c 7 b h ; i ? i j 7 d 9 ; @ k d 9 j ? e d
9 7 i ; r fzc< & & ,'/. d(p r fzc9 ^wsvwv & & /+ 0 e b : ; h ? d = j ; c f ; h 7 j k h ; m 7 l ; i e b : ; h ? d = e d b o 7 b b e m ; : 7 j b ; 7 : i t ea^v c c ? d < h e c 9 7 i ; < e h i & & +/) v< electrical characteristics, 7 j t \ z k d b ; i i e j > ; h m ? i ; i f ; 9 ? < ? ; : static characteristics ! h 7 ? d
i e k h 9 ; 8 h ; 7 a : e m d l e b j 7 = ; v ";k#=ll v @l 3 i = \ .)) & & o $ 7 j ; j > h ; i > e b : l e b j 7 = ; v @l"fz# v =l 6 v @l i = c +'. , ,'. 6 ; h e = 7 j ; l e b j 7 = ; : h 7 ? d 9 k h h ; d j i =ll v =l 3 v @l 3 t \ z & & + x9 v =l 3 v @l 3 t \ z & +) & $ 7 j ;
i e k h 9 ; b ; 7 a 7 = ; 9 k h h ; d j i @ll v @l 3 v =l 3 & & *)) `9 ! h 7 ? d
i e k h 9 ; e d
i j 7 j ; h ; i ? i j 7 d 9 ; r =l"a`# v @l 3 i = t \ z & )'*, )'*- " v @l 3 i = t \ z & )',+ & $ 7 j ; h ; i ? i j 7 d 9 ; r @ f * % p e f ; d : h 7 ? d

" value t < z *- values 1 > ; h c 7 b h ; i ? i j 7 d 9 ; @ k d 9 j ? e d
s_t[w`f / ; l f 7 = ;

IPA50R140CP parameter symbol conditions unit min. typ. max. dynamic characteristics & d f k j 9 7 f 7 9 ? j 7 d 9 ; c [ee & +.-) & b? , k j f k j 9 7 f 7 9 ? j 7 d 9 ; c aee & **) & " < < ; 9 j ? l ; e k j f k j 9 7 f 7 9 ? j 7 d 9 ; ; d ; h = o dw^sfwv .# c a"wd# & **) & " < < ; 9 j ? l ; e k j f k j 9 7 f 7 9 ? j 7 d 9 ; j ? c ; dw^sfwv /# c a"fd# & +,) & 1 k h d
e d : ; b 7 o j ? c ; t v"a`# & ,. & `e / ? i ; j ? c ; t d & *- & 1 k h d
e < < : ; b 7 o j ? c ; t v"axx# & 1) & # 7 b b j ? c ; t x & 1') & $ 7 j ; > 7 h = ; > 7 h 7 9 j ; h ? i j ? 9 i $ 7 j ; j e i e k h 9 ; 9 > 7 h = ; q ye & ** & `< $ 7 j ; j e : h 7 ? d 9 > 7 h = ; q yv & *. & $ 7 j ; 9 > 7 h = ; j e j 7 b q y & -1 /- $ 7 j ; f b 7 j ; 7 k l e b j 7 = ; v b^sfwsg & .'+ & o reverse diode ! ? e : ; < e h m 7 h : l e b j 7 = ; v l= v @l 3 i ? t \ z & )'2 *'+ o / ; l ; h i ; h ; 9 e l ; h o j ? c ; t dd & -)) & `e / ; l ; h i ; h ; 9 e l ; h o 9 > 7 h = ; q dd & .'/ & x< - ; 7 a h ; l ; h i ; h ; 9 e l ; h o 9 k h h ; d j i dd_ & +/ & 9 )# '
0 1 ! 7 d : ' " 0 ! ) ? c ? j ; : e d b o 8 o 1 \%_sj +# - k b i ; m ? : j > t b b ? c ? j ; : 8 o t \%_sj ,# / ; f ; j ? j ? l ; 7 l 7 b 7 d 9 > ; 9 7 k i ; i 7 : : ? j ? e d 7 b f e m ; h b e i i ; i j > 7 j 9 7 d 8 ; 9 7 b 9 k b 7 j ; : 7 i p 9o 6 e 9k $ f. & l= " b = : ? : j " \ i 3 =<^[`] 3 3 bws] 5o ";k#=ll 1 \ 5m \_sj ? : ; d j ? 9 7 b b e m 7 d : > ? = > i ? : ; i m ? j 9 > .# c a"fd# ? i 7 < ? n ; : 9 7 f 7 9 ? j 7 d 9 ; j > 7 j = ? l ; i j > ; i 7 c ; 9 > 7 h = ? d = j ? c ; 7 i c aee m > ? b ; v =l ? i h ? i ? d = < h e c j e v =ll' /# c a"wd# ? i 7 < ? n ; : 9 7 f 7 9 ? j 7 d 9 ; j > 7 j = ? l ; i j > ; i 7 c ; i j e h ; : ; d ; h = o 7 i c aee m > ? b ; v =l ? i h ? i ? d = < h e c j e v =ll' 0# c a"fd# ? i 7 < ? n ; : 9 7 f 7 9 ? j 7 d 9 ; j > 7 j = ? l ; i j > ; i 7 c ; 9 > 7 h = ? d = j ? c ; 7 i c aee m > ? b ; v =l ? i h ? i ? d = < h e c j e v =ll' v k 3 i ? 6 i l v i ? (v t \ i values v @l 3 v =l 3 f * % p v == 3 v @l 3 i = r @ " v == 3 i = v @l j e 3 v @l 3 v =l 3 j e 3 / ; l f 7 = ;

IPA50R140CP 1 power dissipation 2 safe operating area p faf 6x" t < # i = 6x" v =l t < z d 6) f 7 h 7 c ; j ; h t b 3 max. transient thermal impedance 4 typ. output characteristics r "fzc<# 6x"f b i = 6x" v =l t \ z f 7 h 7 c ; j ; h d=t b ( t f 7 h 7 c ; j ; h v @l 0 5 10 15 20 25 30 35 0 50 100 150 t c [c] p t o t [ w ] \ i \ i \ i c i c i =< 10 3 10 2 10 1 10 0 10 2 10 1 10 0 10 -1 v ds [v] i d [ a ] i ? d = b ; f k b i ; )')* )')+ )'). )'* )'+ )'. 10 1 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 1 10 0 10 -1 10 -2 t p [s] z t h j c [ k / w ] 3 3 3 3 3 3 3 3 0 15 30 45 60 75 0 5 10 15 20 v ds [v] i d [ a ] b ? c ? j ; : 8 o e d
i j 7 j ; dwe[efs`uw / ; l f 7 = ;

IPA50R140CP 5 typ. output characteristics 6 typ. drain-source on-state resistance i = 6x" v =l t \ z r =l"a`# 6x" i = t \ z f 7 h 7 c ; j ; h v @l f 7 h 7 c ; j ; h v @l 7 drain-source on-state resistance 8 typ. transfer characteristics r =l"a`# 6x" t \ i = v @l 3 i = 6x" v @l q v =l m7+m i = m r =l"a`#_sj f 7 h 7 c ; j ; h t \ fkb 0.05 0.1 0.15 0.2 0.25 0.3 0.35 -60 -30 0 30 60 90 120 150 180 t j [c] r d s ( o n ) [ ] z z 0 15 30 45 60 75 90 0 3 5 8 10 v gs [v] i d [ a ] 3 3 3 3 3 3 3 3 0 10 20 30 40 50 0 5 10 15 20 25 v ds [v] i d [ a ] 3 3 3 3 3 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 10 20 30 40 50 60 i d [a] r d s ( o n ) [ ] / ; l f 7 = ;

IPA50R140CP 9 typ. gate charge 10 forward characteristics of reverse diode v @l 6x" q ysfw i = f k b i ; : i ? 6x" v l= # f 7 h 7 c ; j ; h v == f 7 h 7 c ; j ; h t \ 11 avalanche energy 12 drain-source breakdown voltage e 9l 6x" t \ i = v == 3 v ;k"=ll# 6x" t \ i = c z z z z 10 2 10 1 10 0 10 -1 0 0.5 1 1.5 2 v sd [v] i f [ a ] 3 3 0 2 4 6 8 10 0 10 20 30 40 50 q gate [nc] v g s [ v ] 440 460 480 500 520 540 560 580 -60 -20 20 60 100 140 180 t j [c] v b r ( d s s ) [ v ] 0 100 200 300 400 500 600 700 25 75 125 175 t j [c] e a s [ m j ] / ; l f 7 = ;

IPA50R140CP 13 typ. capacitances 14 typ. coss stored energy c 6x" v =l v @l 3 f * % p e aee = x (v =l ) 0 2 4 6 8 10 12 0 100 200 300 400 500 v ds [v] e o s s [ j ] <[ee

IPA50R140CP definition of diode switching characteristics / ; l f 7 = ;

IPA50R140CP pg-to220-3-31: outline / fully isolated package (2500vac; 1minute) / ; l f 7 = ;

IPA50R140CP published by infineon technologies ag 81726 munich, germany ? 2007 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office "iii'[`x[`wa`'ua_#' warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. / ; l f 7 = ;

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